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Microwave Distributed Amplifier in Hybrid Integrated Technology

Date

Type

Könyvrészlet

Language

en

Reading access rights:

Regisztrációhoz kötötten használható

Rights Holder

BME

Conference Date

1997 August 30 - September 3

Conference Place

Budapest

Conference Title

13th European Conference on Circuit Theory and Design, ECCTD’1997

ISBN, e-ISBN

ISBN:963-420-5232

Container Title

Proceedings of the 13th European Conference on Circuit Theory and Design: ECCTD’1997

Version

Kiadói változat

Faculty

Villamosmérnöki és Informatikai Kar

First Page

1374

Subject Area

Műszaki tudományok

Subject Field

Villamosmérnöki tudományok

Subject (OSZKAR)

microwave
distributed amplifier
hybrid integration

Title Number

Vol.3

Gender

Konferenciacikk

University

Budapesti Műszaki és Gazdaságtudományi Egyetem

OOC works

Abstract

In the paper the gain-bandwidth relations of microwave distributed amplifiers are analyzed. It is shown that in case of proper realization corresponding to distributed amplifier (DA) requirements the amplifier gain and bandwidth is uniquely related to the transconductance and capacitances of the active elements. Further limitation is due to the parasitic inductance of the connections between the embedding network and the transistor ports. In hybrid integrated amplifiers transistors are often used in chip form, so bonding of the active elements is critical. It is shown analytically that the bonding inductances cause severe distortions in the gain characteristics. The paper introduces a new bonding structure the so called V-shape bonding which is exempt of the above mentioned disadvantages.

Description

Keywords