The effect of parasitic inductances in distributed amplifiers
Date
Type
Könyvrészlet
Language
en
Reading access rights:
Címtáras bejelentkezéshez kötött BME-felhasználók
Rights Holder
IEEE
Conference Date
1998 May 20-22
Conference Place
Kraków, Poland
Conference Title
International Conference on Microwaves and Radar, MIKON’1998
ISBN, e-ISBN
ISBN: 83-906662-0-0
Container Title
Proc. of the International Conference on Microwaves and Radar, MIKON’1998
Department
Mikrohullámú Híradástechnika Tanszék
Version
Post print
Faculty
Villamosmérnöki és Informatikai Kar
First Page
463
Subject Area
Műszaki tudományok
Subject Field
Villamosmérnöki tudományok
Subject (OSZKAR)
parasitic inductance
microwave
distributed amplifier
microwave
distributed amplifier
Title Number
Vol.2
Gender
Konferenciacikk
University
Budapesti Műszaki és Gazdaságtudományi Egyetem
- Cite this item
- http://hdl.handle.net/10890/16315
OOC works
Abstract
The gain-bandwidth relations of distributed amplifiers (DA) are analyzed. It is shown that the amplifier performance is uniquely related to the properties of the active elements and the electrical length of the transmission lines between them. It is proved that the parasitic inductance of the connections between the embedding network and the transistors strongly distorts the gain characteristics. The paper proposes the so-called V-shape connection structure which overcomes the above mentioned disadvantages.