Quantum Mechanical Approach for the Examination of the Properties of MOS Inversion Layers in p-type Silicon

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http://hdl.handle.net/10890/2523
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Title
Quantum Mechanical Approach for the Examination of the Properties of MOS Inversion Layers in p-type Silicon
Author
K Tarnay
F Masszi
T Kocsis
Poppe, András
P Verhás
Date of issue
1992
Language
en
Identifiers
MTMT: 2613515
Title of the container document
Proc. of the 15th NORDIC Semiconductor Meeting
Document type
egyéb konferenciaközlemény
Document genre
konferenciaközlemény