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The effect of parasitic inductances in distributed amplifiers

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MIKON1998_EffectOfParasiticInductances.pdf (1.221Mb)
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Link to refer to this document:
http://hdl.handle.net/10890/16315
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  • Villamosmérnöki tudományok [137]
Abstract
The gain-bandwidth relations of distributed amplifiers (DA) are analyzed. It is shown that the amplifier performance is uniquely related to the properties of the active elements and the electrical length of the transmission lines between them. It is proved that the parasitic inductance of the connections between the embedding network and the transistors strongly distorts the gain characteristics. The paper proposes the so-called V-shape connection structure which overcomes the above mentioned disadvantages.
Title
The effect of parasitic inductances in distributed amplifiers
Chapter/Title number
Vol.2
Author
Zólomy, Attila
Hilt, Attila
Berceli, Tibor
Járó, Gábor
Date of issue
1998-05-20
Access level
Címtáras bejelentkezéshez kötött BME-felhasználók
Copyright owner
IEEE
Conference title
International Conference on Microwaves and Radar, MIKON’1998
Conference place
Kraków, Poland
Conference date
1998 May 20-22
Language
en
Page
463 - 467
Subject
parasitic inductance, microwave, distributed amplifier
Version
Post print
Identifiers
DOI: 10.1109/MIKON.1998.740824
MTMT: 2613256
Scopus: 84963997312
Web of Science: 000077813500088
Title of the container document
Proc. of the International Conference on Microwaves and Radar, MIKON’1998
ISBN, e-ISBN
ISBN: 83-906662-0-0
Document type
Könyvrészlet
Document genre
Konferenciacikk
Subject area
Műszaki tudományok
Field
Villamosmérnöki tudományok
University
Budapesti Műszaki és Gazdaságtudományi Egyetem
Faculty
Villamosmérnöki és Informatikai Kar
Department
Mikrohullámú Híradástechnika Tanszék

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