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Abstract
Optical control of semiconductor devices is a new area, which can be used in several applications. The dynamic behavior of these devices is a crucial problem. Reliable method for its characterization is highly needed. The paper presents characterization methods with their measurement procedures. The measurement setup consists of both optical and microwave instrumentation. The device under test is illuminated by a laser beam intensity modulated by a microwave signal. The modulation represents the perturbation. The device properties are measured without modulation and with varying modulation frequency.
