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Abstract
In the paper the gain-bandwidth relations of microwave distributed amplifiers are analyzed. It is shown that in case of proper realization corresponding to distributed amplifier (DA) requirements the amplifier gain and bandwidth is uniquely related to the transconductance and capacitances of the active elements. Further limitation is due to the parasitic inductance of the connections between the embedding network and the transistor ports. In hybrid integrated amplifiers transistors are often used in chip form, so bonding of the active elements is critical. It is shown analytically that the bonding inductances cause severe distortions in the gain characteristics. The paper introduces a new bonding structure the so called V-shape bonding which is exempt of the above mentioned disadvantages.
